IS42VM32200K-75BLI

容量 64M
規格 2Mx32
電壓 1.8/2.5/3.3V
類型 MSDR
刷新 4K
狀態 EOL
評注
腳位數 BGA(90)
速度Mhz 166, 133
温度等级 I = Industrial Grade (-40°C to +85°C)
焊料類型 L = SnAgCu
Generation K = K
字數 200 = 2M
速度 75 = 133Mhz
工作電壓範圍 VM = 1.8V mobile SDR
總線寬度 32 = x32
腳位/封裝 B = BGA
產品系列 42 = SDR Commercial/Industrial grade

IS42VM32200K-75BLI 特徵

  • Auto refresh and self refresh
  • All pins are compatible with LVCMOS interface
  • 4K refresh cycle / 64ms
  • Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full Page for Sequential Burst - 4 or 8 for Interleave Burst
  • Programmable CAS Latency : 2,3 clocks
  • All inputs and outputs referenced to the positive edge of the system clock
  • Data mask function by DQM
  • Internal 4 banks operation
  • Burst Read Single Write operation
  • Special Function Support - PASR(Partial Array Self Refresh) - Auto TCSR(Temperature Compensated Self Refresh) - Programmable Driver Strength Control - Full Strength or 1/2, 1/4, 1/8 of Full Strength - Deep Power Down Mode

概觀

These IS42SM/RM/VM32200K are mobile 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth. All input and output voltage levels are compatible with LVCMOS.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS42VM32200K-75BLI-TR 6,047 IS42SM32200K-6BLI-TR 6,629
IS42RM32200K-6BLI 165 165 IS42SM32200K-75BLI 6,634
IS42RM32200K-6BLI-TR 6,685 IS42SM32200K-75BLI-TR 6,831
IS42RM32200K-75BLI IS42VM32200K-6BLI 6,511
IS42RM32200K-75BLI-TR IS42VM32200K-6BLI-TR 6,193
IS42SM32200K-6BLI 656 426