容量 128M
規格 4Mx32
電壓 1.8V
刷新 4K
狀態 Contact ISSI
腳位數 TSOP2(86), BGA(90)
速度Mhz 133
温度等级 I = Industrial Grade (-40C to +85°C)
焊料類型 L = 100% matte Sn for non-BGA or SnAgCu for BGA
Generation E = E
總線寬度 32 = 32
工作電壓範圍 VM = 1.8V mobile SDR
CL(CAS延遲) T = 17
字數 4M = 4M
產品系列 42 = SDR Commercial/Industrial grade

IS42VM32400E-10TLI 特徵

  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access and pre- charge
  • Programmable CAS latency: 2, 3
  • Programmable Burst Length: 1, 2, 4, 8, and Full Page
  • Programmable Burst Sequence:
  • Sequential and Interleave
  • Auto Refresh (CBR)
  • TCSR (Temperature Compensated Self Refresh)
  • PASR (Partial Arrays Self Refresh): 1/16, 1/8, 1/4, 1/2, and Full
  • Deep Power Down Mode (DPD)
  • Driver Strength Control (DS): 1/4, 1/2, and Full OPTIONS
  • Configurations: 16M x 8, 8M x 16, 4M x 32
  • Power Supply IS42VMxxx
    • Vdd/Vddq = 1.8 V
  • Packages: x8 / x16
    • TSOP II (54), BGA (54) [x16 only] x32
    • TSOP II (86), BGA (90)


ISSI's 128Mb Mobile Synchronous DRAM achieves high- speed data transfer using pipeline architecture. All input and output signals refer to the rising edge of the clock input. Both write and read accesses to the SDRAM are burst oriented. The 128Mb Mobile Synchronous DRAM is designed to minimize current consumption making it ideal for low-power applications. Both TSOP and BGA packages are offered, including industrial grade products.



IS42VM32400E-10TLI-TR IS42VM32400E-75BL IS42VM32400E-75BLI-TR
IS42VM32400E-10BLI IS42VM32400E-75BL-TR IS42VM32400E-75TLI
IS42VM32400E-10BLI-TR IS42VM32400E-75BLI IS42VM32400E-75TLI-TR