IS42VS16400E-75BL-TR

規格 4Mx16
腳位/封裝 BGA
電壓 1.8V
刷新 4K
字數 4M
焊接 SnAgCu
狀態 EOL
外包裝 Tape on Reel
類型 MSDR
總線寬度 16 = x16
速度(MHz) 133
温規 Commercial Grade (0C to +70°C)
代/版本 E
產品系列 42 = SDR Commercial/Industrial grade
温度等级 blank = Commercial Grade (0°C to +70°C)
焊料類型 L = SnAgCu
Generation E = E
字數 400 = 4M
速度 75 = 133Mhz
工作電壓範圍 VS = 1.8V SDR
腳位/封裝 B = BGA

IS42VS16400E-75BL-TR 特徵

  • Clock frequency: 133 MHz
  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access/precharge
  • Single 1.8V power supply
  • LVCMOS interface
  • Programmable burst length
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Self refresh modes
  • 4096 refresh cycles every 64 ms
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command
  • Byte controlled by LDQM and UDQM
  • Industrial temperature availability

概觀

ISSI's 64Mb Synchronous DRAM IS42VS16400E is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.