IS42VS16800E-10BLI-TR

規格 8Mx16
腳位/封裝 BGA
電壓 1.8V
刷新 4K
字數 8M
焊接 SnAgCu
狀態 Contact ISSI
外包裝 Tape on Reel
類型 MSDR
總線寬度 16 = x16
速度(MHz) 133
温規 Industrial Grade (-40C to +85°C)
代/版本 E
產品系列 42 = SDR Commercial/Industrial grade
温度等级 I = Industrial Grade (-40°C to +85°C)
焊料類型 L = SnAgCu
Generation E = E
字數 800 = 8M
工作電壓範圍 VS = 1.8V SDR
腳位/封裝 B = BGA

IS42VS16800E-10BLI-TR 特徵

  • Clock frequency: 133, 100 MHz
  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access/precharge
  • Power supply: 1.8V
  • LVTTL interface
  • Programmable burst length
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Auto Refresh (CBR)
  • Self Refresh
  • 4096 refresh cycles every 16 ms (A2 grade) or 64 ms (A1 grade)
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command

概觀

ISSI's 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized as follows.