IS42VS32800J-10TLI-TR

容量 256M
規格 8Mx32
電壓 1.8V
類型 SDR
刷新 8K
狀態 Prod
評注  
腳位數 TSOP2(86), BGA(90)
速度Mhz 125, 100
温度等级 I = Industrial Grade (-40C to +85°C)
焊料類型 L = 100% matte Sn for non-BGA or SnAgCu for BGA
Generation J = J
總線寬度 32 = 32
工作電壓範圍 VS = 1.8V SDR
CL(CAS延遲) T = 17
字數 8M = 8M
產品系列 42 = SDR Commercial/Industrial grade
外包裝 Tape on Reel

IS42VS32800J-10TLI-TR 特徵

  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access and pre- charge
  • Programmable CAS latency: 2, 3
  • Programmable Burst Length: 1, 2, 4, 8, and Full Page
  • Programmable Burst Sequence:
    • Sequential and Interleave
  • Auto Refresh (CBR) OPTIONS
  • Configurations:
    • 32M x 8
    • 16M x 16
    • 8M x 32
  • Power Supply IS42VSxxx
    • Vdd/Vddq = 1.8V
  • Packages: x8
    • TSOP II (54) x16
    • TSOP II (54) x32
    • TSOP II (86)

概觀

ISSI's 256Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All input and output signals refer to the rising edge of the clock input. Both write and read accesses to the SDRAM are burst oriented. The 256Mb Synchronous DRAM is designed to minimize power consumption making it ideal for low- power applications.

 

相關IC编號

IS42VS32800J-10TLI