IS42VS83200J-75TLI

規格 16Mx16
腳位/封裝 TSOP
電壓 1.8V
刷新 8K
字數 32M
焊接 100% matte Sn
狀態 Prod
類型 SDR
總線寬度 8 = x8
速度(MHz) up to 133Mhz @ CL2
温規 Industrial Grade (-40C to +85°C)
代/版本 J
產品系列 42 = SDR Commercial/Industrial grade
温度等级 I = Industrial Grade (-40°C to +85°C)
焊料類型 L = 100% matte Sn
Generation J = J
字數 3200 = 32M
速度 75 = 133Mhz
工作電壓範圍 VS = 1.8V SDR
腳位/封裝 T = TSOP

IS42VS83200J-75TLI 特徵

  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access and pre- charge
  • Programmable CAS latency: 2, 3
  • Programmable Burst Length: 1, 2, 4, 8, and Full Page
  • Programmable Burst Sequence:
    • Sequential and Interleave
  • Auto Refresh (CBR) OPTIONS
  • Configurations:
    • 32M x 8
    • 16M x 16
    • 8M x 32
  • Power Supply IS42VSxxx
    • Vdd/Vddq = 1.8V
  • Packages: x8
    • TSOP II (54) x16
    • TSOP II (54) x32
    • TSOP II (86)

概觀

ISSI's 256Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All input and output signals refer to the rising edge of the clock input. Both write and read accesses to the SDRAM are burst oriented. The 256Mb Synchronous DRAM is designed to minimize power consumption making it ideal for low- power applications.