容量 256M
規格 16Mx16
電壓 2.5V
類型 SDR
刷新 8K
狀態 EOL
腳位數 TSOP2(54), BGA(54)
速度Mhz 133
温度等级 blank = Commercial Grade (0C to +70°C)
焊料類型 blank = Sn/Pb
Generation D = D
總線寬度 16 = 16
速度 7 = 143MHz
工作電壓範圍 R = 2.5V DDR or 2.5V SDR
字數 16M = 16M
產品系列 45 = SDR Automotive grade
外包裝 Tape on Reel

IS45R16160D-75TLA2-TR 特徵

  • Clock frequency: 133, 100 MHz
  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access/precharge
  • Single Power supply: 2.5V + 0.2V
  • LVTTL interface
  • Programmable burst length
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Auto Refresh (CBR)
  • Self Refresh
  • 8K refresh cycles every 16 ms (A2 grade) or 64 ms (commercial, industrial, A1 grade)
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command OPTIONS
  • Package: 54-pin TSOP-II (x8 and x16) 54-ball BGA (x16 only)


ISSI's 256Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 256Mb SDRAM is organized as follows.



IS45R16160D-75TLA2 IS42R16160D-75TL IS45R16160D-75BLA1-TR IS45R16160D-75TLA1
IS42R16160D-75BL IS42R16160D-75TL-TR IS45R16160D-75BLA2 IS45R16160D-75TLA1-TR
IS42R16160D-75BL-TR IS42R16160D-75TLI IS45R16160D-75BLA2-TR
IS42R16160D-75BLI IS42R16160D-75TLI-TR IS45R16160D-75CTNA2
IS42R16160D-75BLI-TR IS45R16160D-75BLA1 IS45R16160D-75CTNA2-TR