容量 256M
規格 32Mx8
電壓 2.5V
類型 SDR
刷新 8K
狀態 Contact ISSI
腳位數 TSOP2(54), BGA(54)
速度Mhz 133, 100
温度等级 blank = Commercial Grade (0C to +70°C)
焊料類型 blank = Sn/Pb
Generation J = J
總線寬度 8 = 8
速度 7 = 143MHz
工作電壓範圍 R = 2.5V DDR or 2.5V SDR
字數 32M = 32M
產品系列 45 = SDR Automotive grade

IS45R83200J-75CTLA2 特徵

  • Clock frequency: 133, 100 MHz
  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access/precharge
  • Single Power supply: 2.5V + 0.2V
  • LVTTL interface
  • Programmable burst length
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Auto Refresh (CBR)
  • Self Refresh
  • 8K refresh cycles every 32 ms (A2 grade) or 64 ms (commercial, industrial, A1 grade)
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command OPTIONS
  • Package: 54-pin TSOP-II 54-ball BGA


ISSI's 256Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 256Mb SDRAM is organized as follows.



IS45R83200J-75CTLA2-TR IS42R83200J-75TL IS45R83200J-75BLA1-TR IS45R83200J-75TLA2
IS42R83200J-75BL IS42R83200J-75TL-TR IS45R83200J-75CTLA1 IS45R83200J-75TLA2-TR
IS42R83200J-75BL-TR IS42R83200J-75TLI IS45R83200J-75CTLA1-TR
IS42R83200J-75BLI IS42R83200J-75TLI-TR IS45R83200J-75TLA1
IS42R83200J-75BLI-TR IS45R83200J-75BLA1 IS45R83200J-75TLA1-TR