IS45RM32800K-6BLA1

容量 256M
規格 8Mx32
電壓 1.8/2.5/3.3V
類型 MSDR
刷新 4K
狀態 Prod
評注
腳位數 BGA(90)
速度Mhz 166, 133
温度等级 A1 = Automotive Grade (-40°C to +85°C)
焊料類型 L = SnAgCu
Generation K = K
字數 800 = 8M
速度 6 = 166MHz
工作電壓範圍 RM = 2.5V
總線寬度 32 = x32
腳位/封裝 B = BGA
產品系列 45 = SDR Automotive grade

IS45RM32800K-6BLA1 特徵

  • Auto refresh and self refresh.
  • All pins are compatible with LVCMOS interface.
  • 4K refresh cycle every 16ms (A2 grade) or 64 ms (Industrial, A1 grade).
  • Programmable Burst Length and Burst Type. - 1, 2, 4, 8 or Full Page for Sequential Burst. - 4 or 8 for Interleave Burst.
  • Programmable CAS Latency : 2, 3 clocks.
  • All inputs and outputs referenced to the positive edge of the system clock.
  • Data mask function by DQM.
  • Internal 4 banks operation.
  • Burst Read Single Write operation.
  • Special Function Support. - PASR(Partial Array Self Refresh) - Auto TCSR(Temperature Compensated Self Refresh) - Programmable Driver Strength Control
  • Full Strength or 3/4, 1/2, 1/4, 1/8 of Full Strength - Deep Power Down Mode

概觀

These IS42/45SM/RM/VM32800K are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 32.

 

相關IC编號

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IS45RM32800K-6BLA1-TR IS45RM32800K-75BLA2-TR
IS42RM32800K-6BLI 30 6,130 IS45SM32800K-6BLA1
IS42RM32800K-6BLI-TR 7,500 IS45SM32800K-6BLA1-TR
IS42RM32800K-75BLI 6,675 IS45SM32800K-6BLA2
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IS42SM32800K-6BLI 3 35 IS45SM32800K-75BLA1
IS42SM32800K-6BLI-TR 7,500 IS45SM32800K-75BLA1-TR
IS42SM32800K-75BLI 6,052 IS45SM32800K-75BLA2
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IS42VM32800K-6BLI 246 33 IS45VM32800K-6BLA1
IS42VM32800K-6BLI-TR 7,500 IS45VM32800K-6BLA1-TR
IS42VM32800K-75BLI 12,000 IS45VM32800K-6BLA2
IS42VM32800K-75BLI-TR 7,500 IS45VM32800K-6BLA2-TR
IS45RM32800K-6BLA2 IS45VM32800K-75BLA1
IS45RM32800K-6BLA2-TR IS45VM32800K-75BLA1-TR
IS45RM32800K-75BLA1 IS45VM32800K-75BLA2
IS45RM32800K-75BLA1-TR IS45VM32800K-75BLA2-TR
IS45RM32800K-75BLA2