IS46DR16160B-3DBLA1-TR

Density	256M
Org	16Mx16
Vcc	1.8V
Type	DDR2
Refresh	8K
Speed	3 = 333MHz
Status	Prod
Comment
Pkg Pins	WBGA(84)
Temp. Grade	A1 = Automotive Grade (-40°C to +85°C)
Solder Type	L = SnAgCu
Number Of Words	160 = 16M
CL (CAS Latency)	D = 5
Operating Voltage Range	DR = 1.8V DDR2
Generation	B = B
Bus Width	16 = x16
Package Type	B = BGA
Product Family	46 = DDR/DDR2/DDR3/DDR4 Automotive grade
Outpack	Tape on Reel

Datasheet

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IS46DR16160B-3DBLA1-TR Features

Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V
JEDEC standard 1.8V I/O (SSTL_18-compatible)
Double data rate interface: two data transfers per clock cycle
Differential data strobe (DQS, DQS)
4-bit prefetch architecture
On chip DLL to align DQ and DQS transitions with CK
4 internal banks for concurrent operation
Programmable CAS latency (CL) 3, 4, 5, 6 and 7 sup- ported
Posted CAS and programmable additive latency (AL) 0, 1, 2, 3, 4, 5 and 6 supported
WRITE latency = READ latency - 1 tCK
Programmable burst lengths: 4 or 8
Adjustable data-output drive strength, full and re- duced strength options
On-die termination (ODT) OPTIONS
Configuration: 16Mx16 (4Mx16x4 banks) IS43/46DR16160B
Package: 84-ball TW-BGA (8mm x 12.5mm) Timing
- Cycle time 2.5ns @CL=5 DDR2-800D 2.5ns @CL=6 DDR2-800E 3.0ns @CL=5 DDR2-667D 3.75ns @CL=4 DDR2-533C 5.0ns @CL=3 DDR2-400B

Overview

ISSI's 256Mb DDR2 SDRAM uses a double-data-rate architecture to achieve high-speed operation. The double-data rate architecture is essentially a 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls.

Related Part Number(s)

Description	Available Qty	Description	Available Qty
IS46DR16160B-3DBLA1	6,970	IS46DR16160B-37CBLA1-TR
IS46DR16160B-37CBA1		IS46DR16160B-3DBLA2	6,147
IS46DR16160B-37CBA1-TR		IS46DR16160B-3DBLA2-TR	7,500
IS46DR16160B-37CBLA1