IS61WV12824-10B

容量 3M
規格 128Kx24
電壓 1.65-2.2V
狀態 Prod
腳位數 BGA(119), QFP(100)
速度Ns 8, 10
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IS61WV12824-10B 特徵

  • High-speed access time: 8, 10 ns
  • High-performance, low-power CMOS process
  • TTL compatible interface levels
  • Single power supply VDD 3.3V ± 5% for 8ns VDD 2.4V to 3.6V for 10ns
  • Fully static operation: no clock or refresh required
  • Three state outputs
  • Available in 119-pin Ball Grid Array (BGA) and 100-pin QFP packages.
  • Industrial temperature available

概觀

The ISSI IS61WV12824 is a high-speed, static RAM organized as 131,072 words by 24 bits. It is fabricated using ISSI's high- performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power consumption.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS61WV12824-10B-TR IS61WV12824-10TQLI-TR
IS61WV12824 IS61WV12824-8B
IS61WV12824-10BI IS61WV12824-8B-TR
IS61WV12824-10BI-TR IS61WV12824-8BI
IS61WV12824-10BL IS61WV12824-8BI-TR
IS61WV12824-10BL-TR IS61WV12824-8BL 10,000
IS61WV12824-10TQL IS61WV12824-8BL-TR
IS61WV12824-10TQL-TR IS61WV12824-8TQL
IS61WV12824-10TQLI 10,000 IS61WV12824-8TQL-TR