規格 | 1Mx16 |
---|---|
腳位/封裝 | TFBGA(48) |
電壓 | 2.7-3.6V |
電壓 - 電源 | BLL = 3V |
焊接 | Lead-free (RoHS Compliant) |
狀態 | Prod |
評注 | Asynch/Page |
速度(ns) | 70 |
温規 | Industrial Grade (-40C to +85°C) |
產品類別 | WVE = Asynch/Page PSRAM |
產品系列 | Pseudo SRAM |
Item | 66 = Pseudo SRAM/HyperRAM™ |
ROHS版 | L = true |
溫度範圍 | I = Industrial (-40°C to 85°C) |
速度 | 55 = 55 MHz |
密度配置 | 1M16 = 16Mb /1M x16 |
包裝代碼 | B = 48-ball TFBGA |
The IS66WVE1M16BLL is an integrated memory device containing 16Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 1M words by 16 bits. The device includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and Deep Power Down mode. Both these modes reduce standby current drain. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.