| 容量 | 32M |
|---|---|
| 規格 | 2Mx16 |
| 電壓 | 1.7-1.95V/ 2.7-3.6V |
| 狀態 | Prod |
| 腳位數 | TFBGA(48) |
| 速度Ns | 70 |
| 評論上一篇 | Asynch/ Page |
| 包裝代碼 | B = 48-ball TFBGA |
| 密度配置 | 2M16 = 32Mb /2M x16 |
| ROHS版 | L = true |
| 產品類別 | WVE = Asynch/Page PSRAM |
| 溫度範圍 | I = Industrial (-40°C to 85°C) |
| 速度 | 70 = 70 MHz |
| 電壓 - 電源 | BLL = 3V |
| Item | 66 = Pseudo SRAM/HyperRAM™ |
The IS66/67WVE2M16EALL/BLL/CLL and IS66/67WVE2M16TALL/BLL/CLL are integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and Deep Power Down mode. Both these modes reduce standby current drain. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.