IS43DR32801A-5BBL

容量 256M
規格 8Mx32
電壓 1.8V
類型 DDR2
刷新 8K
速度 5 = 200MHz
狀態 OBS
評注 Reduced page option
腳位數 BGA(126)
温度等级 blank = Commercial Grade (0°C to +70°C)
焊料類型 L = SnAgCu
Generation A = A
字數 801 = 8M
CL(CAS延遲) B = 3
工作電壓範圍 DR = 1.8V DDR2
總線寬度 32 = x32
腳位/封裝 B = BGA
產品系列 43 = DDR/DDR2/DDR3/DDR4 Commercial/Industrial grade

IS43DR32801A-5BBL 特徵

  • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V
  • JEDEC standard 1.8V I/O (SSTL_18-compatible)
  • Differential data strobe (DQS, DQS)
  • 4-bit prefetch architecture
  • On chip DLL to align DQ and DQS transitions with CK
  • 4 internal banks for concurrent operation
  • Programmable CAS latency (CL) 3, 4, 5, and 6 supported
  • Posted CAS and programmable additive latency (AL) 0, 1, 2, 3, 4, and 5 supported
  • WRITE latency = READ latency - 1 tCK
  • Programmable burst lengths: 4 or 8
  • Adjustable data-output drive strength, full and reduced strength options
  • On-die termination (ODT) OPTIONS 
  • Configuration:   8M x 32 (IS43DR32800A Standard Page - 4K refresh) 8M x 32 (IS43/46DR32801A Reduced Page - 8K refresh)
  • Package: x32: 126 WBGA
  • Timing
    • Cycle time 3.0ns @CL=5, DDR2-667D 3.75ns @CL=4, DDR2-533C 5.0ns @CL=3, DDR2-400B

概觀

ISSI's 256Mb DDR2 SDRAM uses a double-data-rate architecture to achieve high-speed operation. The double-data rate architecture is essentially a 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls. The 256Mb DDR2 SDRAM is provided in a wide bus x32 format, designed to offer a smaller footprint and support compact designs.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS43DR32801A-5BBL-TR 2,000 IS43DR32801A-37CBLI-TR 2,000
IS43DR32801A-37CBL 162 IS43DR32801A-5BBLI 162
IS43DR32801A-37CBL-TR 2,000 IS43DR32801A-5BBLI-TR 2,000
IS43DR32801A-37CBLI 70 10,000