| Buy | |
|---|---|
| 容量 | 1G |
| 規格 | 64Mx16 |
| 電壓 | 1.8V |
| 類型 | DDR2 |
| 刷新 | 8K |
| 速度 | 18 = 533MHz |
| 狀態 | Prod |
| 腳位數 | BGA(84) |
| 評論上一篇 | |
| 温度等级 | A1 = Automotive Grade (-40°C to +85°C) |
| 焊料類型 | L = SnAgCu |
| 字數 | 640 = 64M |
| CL（CAS延遲） | F = 7 |
| 工作電壓範圍 | DR = 1.8V DDR2 |
| Generation | D = D |
| 總線寬度 | 16 = x16 |
| 腳位/封裝 | B = BGA |
| 產品系列 | 46 = DDR/DDR2/DDR3/DDR4 Automotive grade |
Read and write accesses to the DDR2 SDRAM are burst oriented; accesses start at a selected location and continue for a burst length of four or eight in a programmed sequence. Accesses begin with the registration of an Active command, which is then followed by a Read or Write command. The address bits registered coincident with the active command are used to select the bank and row to be accessed (BA0-BA2 select the bank; A0-A12(x16) or A0-A13(x8) select the row). The address bits registered coincident with the Read or Write command are used to select the starting column location A0-A9 for the burst access and to determine if the auto precharge A10 command is to be issued. Prior to normal operation, the DDR2 SDRAM must be initialized. The following sections provide detailed information covering device initialization, register definition, command descriptions and device operation.