IS43TR16512BL-125KBL

容量	8G
規格	512Mx16
電壓	1.5V
類型	DDR3
刷新	8K
速度	125 = 800MHz
狀態	Prod
腳位數	BGA(96)
評論上一篇
温度等级	blank = Commercial Grade (0°C to +70°C)
焊料類型	L = SnAgCu
字數	512 = 512M
CL（CAS延遲）	K = 11
Low Voltage	L = Supports 1.35V & 1.5V
工作電壓範圍	TR = 1.5V DDR3
Generation	B = B
總線寬度	16 = x16
腳位/封裝	B = BGA
產品系列	43 = DDR/DDR2/DDR3/DDR4 Commercial/Industrial grade

IS43TR16512BL-125KBL 特徵

Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V
High speed data transfer rates with system frequency up to 1066 MHz
8 internal banks for concurrent operation
8n-Bit pre-fetch architecture
Programmable CAS Latency JUNE 2018 PRELIMINARY INFORMATION
Refresh Interval: 7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C 3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C
Partial Array Self Refresh
Asynchronous RESET pin
TDQS (Termination Data Strobe) supported (x8 only)
OCD (Off-Chip Driver Impedance Adjustment)
Programmable Additive Latency: 0, CL-1,CL-2
Dynamic ODT (On-Die Termination)
Programmable CAS WRITE latency (CWL) based
Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω) on tCK
Programmable Burst Length: 4 and 8
Programmable Burst Sequence: Sequential or
Write Leveling
Up to 200 MHz in DLL off mode
Operating temperature: Interleave
BL switch on the fly
Auto Self Refresh(ASR)
Self Refresh Temperature(SRT) OPTIONS
Configuration: 1Gx8 512Mx16

IC 編號	可用數量	IC 編號	可用數量
IS43TR16512BL-125KBL-TR	2,000	IS43TR16512B-125KBL-TR
IS43TR16512B-093NBL	5,000	IS43TR16512B-125KBLI	21
IS43TR16512B-093NBL-TR		IS43TR16512B-125KBLI-TR
IS43TR16512B-093NBLI	50,000	IS43TR16512BL-107MBL	44
IS43TR16512B-093NBLI-TR		IS43TR16512BL-107MBL-TR
IS43TR16512B-107MBL	50,000	IS43TR16512BL-107MBLI	387
IS43TR16512B-107MBL-TR		IS43TR16512BL-107MBLI-TR
IS43TR16512B-107MBLI	50,000	IS43TR16512BL-125KBLI	7,397
IS43TR16512B-107MBLI-TR		IS43TR16512BL-125KBLI-TR	2,000
IS43TR16512B-125KBL	1,200