IS43TR85120B-093NBL

容量	4G
規格	512Mx8
電壓	1.5V
類型	DDR3
刷新	8K
速度	093 = 1066MHz
狀態	S=NOW
腳位數	BGA(78)
評論上一篇
温度等级	blank = Commercial Grade (0°C to +70°C)
焊料類型	L = SnAgCu
字數	5120 = 512M
CL（CAS延遲）	N = 14
工作電壓範圍	TR = 1.5V DDR3
Generation	B = B
總線寬度	8 = x8
腳位/封裝	B = BGA
產品系列	43 = DDR/DDR2/DDR3/DDR4 Commercial/Industrial grade

IS43TR85120B-093NBL 特徵

Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V
High speed data transfer rates with system frequency up to 1066 MHz
8 internal banks for concurrent operation
8n-Bit pre-fetch architecture
Programmable CAS Latency
Programmable Additive Latency: 0, CL-1,CL-2
Programmable CAS WRITE latency (CWL) based on tCK
Programmable Burst Length: 4 and 8
Programmable Burst Sequence: Sequential or Interleave
BL switch on the fly
Auto Self Refresh(ASR)
Self Refresh Temperature(SRT) OPTIONS
Configuration: 512Mx8 256Mx16
Package: 96-ball FBGA (9mm x 13mm) for x16 78-ball FBGA (8mm x 10.5mm) for x8 SPEED BIN ADVANCED INFORMATION MARCH 2018
Refresh Interval: 7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C 3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C
Partial Array Self Refresh
Asynchronous RESET pin
TDQS (Termination Data Strobe) supported (x8 only)
OCD (Off-Chip Driver Impedance Adjustment)
Dynamic ODT (On-Die Termination)
Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)
Write Leveling