1. 矽成
  2. 動態記憶體
  3. 第三代雙倍資料率同步動態隨機存取記憶體
  4. 1.5V
  5. 2G 256Mx8
  6. BGA(78)
  7. IS46TR16128AL-15HBLA2

  IS46TR16128AL-15HBLA2

數據表
索取報價
容量 2G
規格 256Mx8
腳位/封裝 BGA(78)
電壓 1.5V
刷新 8K
速度 15 = 667MHz
字數 128M
型號別 IBIS
焊接 SnAgCu
狀態 EOL
類型 DDR3
總線寬度 16 = x16
温規 Automotive Grade (-40C to +105°C)
CL（CAS延遲） H = 9
代/版本 A
產品系列 46 = DDR/DDR2/DDR3/DDR4 Automotive grade
温度等级 A2 = Automotive Grade (-40°C to +105°C)
焊料類型 L = SnAgCu
字數 128 = 128M
Low Voltage L = Supports 1.35V & 1.5V
工作電壓範圍 TR = 1.5V DDR3
Generation A = A
腳位/封裝 B = BGA
數據表
索取報價

IS46TR16128AL-15HBLA2 特徵

  • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
  • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V
  • High speed data transfer rates with system frequency up to 933 MHz
  • 8 internal banks for concurrent operation
  • 8n-Bit pre-fetch architecture
  • Programmable CAS Latency OCTOBER 2015
  • Refresh Interval: 7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C 3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C
  • Partial Array Self Refresh
  • Asynchronous RESET pin
  • TDQS (Termination Data Strobe) supported (x8 only)
  • OCD (Off-Chip Driver Impedance Adjustment)
  • Programmable Additive Latency: 0, CL-1,CL-2
  • Dynamic ODT (On-Die Termination)
  • Programmable CAS WRITE latency (CWL) based
  • Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω) on tCK
  • Programmable Burst Length: 4 and 8
  • Programmable Burst Sequence: Sequential or Interleave
  • BL switch on the fly
  • Auto Self Refresh(ASR)
  • Self Refresh Temperature(SRT) OPTIONS
  • Configuration: 256Mx8 128Mx16
  • Package: 96-ball FBGA (9mm x 13mm) for x16 78-ball FBGA (8mm x 10.5mm) for x8 SPEED BIN
  • Write Leveling
  • Up to 200 MHz in DLL off mode