容量 | 64M |
---|---|
規格 | 8Mx8 |
腳位/封裝 | BGA(24) |
電壓 | 1.7-1.95V |
焊接 | Lead-free (RoHS Compliant) |
狀態 | Prod |
速度(MHz) | 166 |
温規 | Industrial Grade (-40C to +85°C) |
電壓範圍 | 2.2V (2.4V/2.5V) to 3.6V |
產品系列 | Pseudo SRAM |
Item | 66 = Pseudo SRAM/HyperRAM™ |
ROHS版 | L = true |
產品類別 | WVH = HyperRAM |
溫度範圍 | I = Industrial (-40°C to 85°C) |
速度 | 100 = 100 MHz |
電壓 - 電源 | BLL = 3V |
密度配置 | 8M8 = 64Mb /8M x8 |
包裝代碼 | B = BGA |
The IS66/67WVH8M8ALL/BLL are integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 8M words by 8 bits. The device supports a HyperBus interface, Very Low Signal Count (Address, Command and data through 8 DQ pins), Hidden Refresh Operation, and Automotive Temperature Operation, designed specially for Mobile and Automotive applications.