IS67WVH8M8ALL-133BLA2

規格	8Mx8
腳位/封裝	BGA(24)
電壓	2.7-3.6V
焊接	Lead-free (RoHS Compliant)
狀態	Prod
速度（MHz）	100
温規	Automotive Grade (-40C to +105°C)
電壓範圍	1.65V to 2.2V
產品系列	Automotive PSRAM
包裝代碼	B = BGA
密度配置	8M8 = 64Mb /8M x8
ROHS版	L = true
產品類別	WVH = HyperRAM
溫度範圍	A2 = Automotive (-40°C to +105°C)
速度	133 = 133 MHz
電壓 - 電源	ALL = 1.8V
Item	67 = Automotive PSRAM/HyperRAM™

數據表

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IS67WVH8M8ALL-133BLA2 特徵

3.0V I/O, 11 bus signals
- Single ended clock (CK)
1.8V I/O, 12 bus signals
- Differential clock (CK, CK#)
Chip Select (CS#)
8-bit data bus (DQ[7:0])
Read-Write Data Strobe (RWDS)
- Bidirectional Data Strobe / Mask
- Output at the start of all transactions to indicate refresh latency
- Output during read transactions as Read Data Strobe
- Input during write transactions as Write Data Mask RESET# CS# CK CK# VCC VCCQ DQ[7:0] RWDS VSS VSSQ High Performance
Up to 333MB/s
Double-Data Rate (DDR) - two data transfers per clock
166-MHz clock rate (333 MB/s) at 1.8V VCC
100-MHz clock rate (200 MB/s) at 3.0V VCC
Sequential burst transactions
Configurable Burst Characteristics
- Wrapped burst lengths:
- 16 bytes (8 clocks)
- 32 bytes (16 clocks)
- 64 bytes (32 clocks)
- 128 bytes (64 clocks)
- Linear burst
- Hybrid option - one wrapped burst followed by linear burst
- Wrapped or linear burst type selected in each transaction
- Configurable output drive strength

概觀

The IS66/67WVH8M8ALL/BLL are integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 8M words by 8 bits. The device supports a HyperBus interface, Very Low Signal Count (Address, Command and data through 8 DQ pins), Hidden Refresh Operation, and Automotive Temperature Operation, designed specially for Mobile and Automotive applications.