IS43LD32128C-25BPL

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容量 4G
規格 128Mx32
電壓 1.2/1.8V
類型 LPDDR2
刷新 8K
狀態 S=Q2/22
腳位數 BGA(134), PoP(168)
速度Mhz 533, 400
評論上一篇
温度等级 blank = Commercial Grade (0°C to +70°C)
焊料類型 L = SnAgCu
字數 128 = 128M
工作電壓範圍 LD = 1.2V - 1.8V LPDDR2
速度 25 = 400MHz
Generation C = C
總線寬度 32 = x32
腳位/封裝 BP = PoP BGA
產品系列 43 = DDR/DDR2/DDR3/DDR4 Commercial/Industrial grade

IS43LD32128C-25BPL 特徵

  • Hardware Features
  • - SCLK Input: Serial clock input - SIO0
    • SIO3: Serial Data Input or Serial Data Output - DQSM: - Output during command, address transactions as Refresh Collision Indicator - Output during read data transactions as Read Data Strobe - Input during write data transactions as Write Data Mask - RESET#: Hardware Reset pin Industrial: -40°C to +85°C
  • Temperature Grades
  • - - Extended: -40°C to +105°C - Auto (A3) Grade: -40°C to +125°C
  • Industry Standard PACKAGE
  • - B = 24-ball TFBGA 6x8mm 5x5 Array - M = 16-pin 300mil SOIC (1) - KGD (Call Factory) Note: 1. 133MHz (max.) for 16-pin SOIC package
  • Industry Standard Serial Interface
  • - Quad DDR (x4 xSPI) Interface: Command (1 byte) =SDR Address (2-byte) & Data = DDR - Low Signal Counts :7 Signal pins (CS#, SCLK, DQSM, SIO0~SIO3)
  • High Performance
  • - Double Data Rate (DDR) Operation: 200MHz (200MB/s) at 1.8V VCC (1) 133MHz (133MB/s) at 3.0V VCC - Source Synchronous Output signal during Read Operation (DQSM) - Data Mask during Write Operation (DQSM) - Configurable Latency for Read/Write Operation - Supports Variable Latency mode and Fixed Latency mode - Configurable Drive Strength - Supports Wrapped Burst mode and Continuous mode - Supports Deep Power Down mode - Hidden Refresh
  • Burst Operation
  • - Configurable Wrapped Burst Length : 16, 32, 64, and 128 - Continuous Operation: - Continues Read operation until the end of array address (No Wrapped) - Continues Write operation even after the end of array address (Wrapped to first address)

概觀

The IS66/67WVQ4M4DALL/BLL are integrated memory device containing 16Mb Pseudo Static Random Access Memory, using a self-refresh DRAM array organized as 2M words by 8 bits. The device supports Quad DDR interface, which is compatible with JEDEC standard x4 xSPI Flash. The device supports Very Low Signal Count (7 signal pins; SCLK, CS#, DQSM, and 4 SIOs), Hidden Refresh Operation, and Automotive temperature (A3, -40°C to +125°C) operation. Due to DDR operation, minimum transferred data size is a byte (8 bits) through 4 SIO pins. PERFORMANCE SUMMARY.

 

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