| Buy | |
|---|---|
| 容量 | 4G |
| 規格 | Two channel (2x16) |
| 電壓 | 1.1V/1.8V |
| 類型 | LPDDR4 |
| 速度 | 3200 |
| 狀態 | Prod |
| 腳位數 | BGA(200) |
| 温度等级 | I = Industrial Grade (-40°C to +85°C) |
| 焊料類型 | L = SnAgCu |
| 字數 | 128 = 128M |
| CL（CAS延遲） | T = 17 |
| 工作電壓範圍 | LQ = 1.1V LPDDR4 |
| Generation | EA = EA |
| 總線寬度 | 32 = x32 |
| 腳位/封裝 | B = BGA |
| 產品系列 | 43 = DDR/DDR2/DDR3/DDR4 Commercial/Industrial grade |
The IS66/67WVS1M8ALL/BLL are integrated memory device containing 8Mb Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 1M words by 8 bits. The device supports SPI (Serial Peripheral Interface) & QPI (Quad Peripheral Interface) protocols, Very Low Signal Count (6 signal pins; CLK, CE#, and 4 SIOs), Hidden Refresh Operation, and Industrial temperature and Automotive A2 grade temperature. In-Band Reset is supported instead of dedicated RESET# pin, and minimum transferred data size is 8bit. PERFORMANCE SUMMARY.