IS42S32200N-5BL-TR

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容量	64M
規格	2Mx32
電壓	3.3V
類型	SDR
刷新	4K
速度	5 = 200MHz
狀態	Prod
評注
腳位數	TSOP2(86), BGA(90)
温度等级	blank = Commercial Grade (0°C to +70°C)
焊料類型	L = SnAgCu
字數	200 = 2M
工作電壓範圍	S = 3.3V SDR
Generation	N = N
總線寬度	32 = x32
腳位/封裝	B = BGA
產品系列	42 = SDR Commercial/Industrial grade
外包裝	Tape on Reel

IS42S32200N-5BL-TR 特徵

Clock frequency: 200, 166, 143, 133 MHz ISSI's 64Mb Synchronous DRAM IS42/45S32200N is organized as 524,288 bits x 32-bit x 4-bank for improved
Fully synchronous; all signals referenced to a performance.The synchronous DRAMs achieve high-speed positive clock edge data transfer using pipeline architecture. All inputs and
Internal bank for hiding row access/precharge outputs signals refer to the rising edge of the clock input.
Single 3.3V power supply
LVTTL interface KEY TIMING PARAMETERS
Programmable burst length: Parameter -5 -6 -7 Unit (1, 2, 4, 8, full page) Clk Cycle Time CAS Latency = 3 5 6 7 ns
Programmable burst sequence: Sequential/Interleave CAS Latency = 2 7.5 7.5 7.5 ns Clk Frequency
Self refresh modes CAS Latency = 3 200 166 143 Mhz
4096 refresh cycles every 16ms (A2 grade) or CAS Latency = 2 133 133 133 Mhz 64ms (Commercia, Industrial, A1 grade) Access Time from Clock
Random column address every clock cycle CAS Latency = 3 4.8 5.4 5.4 ns
Programmable CAS latency (2, 3 clocks) CAS Latency = 2 5.4 5.4 5.4 ns
Burst read/write and burst read/single write operations capability ADDRESS TABLE
Burst termination by burst stop and precharge Parameter 2M x 32 command Configuration 512K x 32 x 4 banks Refresh Count Com./Ind. 4K / 64ms OPTIONS A1 4K / 64ms
Green Packages: A2 4K / 16ms 86-pin TSOP-II Row Addresses A0
- A10 90-ball TF-BGA Column Addresses A0
- A7