IS42S32400E-6B-TR

容量 128M
規格 4Mx32
電壓 3.3V
類型 SDR
刷新 4K
速度 6 = 166MHz
狀態 Contact ISSI
評注
腳位數 TSOP2(86), BGA(90)
温度等级 blank = Commercial Grade (0°C to +70°C)
焊料類型 blank = Sn/Pb
Generation E = E
字數 400 = 4M
工作電壓範圍 S = 3.3V SDR
總線寬度 32 = x32
腳位/封裝 B = BGA
產品系列 42 = SDR Commercial/Industrial grade
外包裝 Tape on Reel

IS42S32400E-6B-TR 特徵

  • Clock frequency: 166, 143, 133 MHz
  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access/precharge
  • Single Power supply: 3.3V + 0.3V
  • LVTTL interface
  • Programmable burst length
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Auto Refresh (CBR)
  • Self Refresh
  • 4096 refresh cycles every 16ms (A2 grade) or 64 ms (Commercial, Industrial, A1 grade)
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command OPTIONS
  • Package: 86-pin TSOP-II 90-ball TF-BGA

概觀

ISSI's 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized in 1Meg x 32 bit x 4 Banks.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS42S32400E-6B 240 IS42S32400E-75ETLI-TR
IS42S32400E IS42S32400E-7BI 1,410 1,406
IS42S32400E-6BL 798 798 IS42S32400E-7BI-TR 2,500
IS42S32400E-6BL-TR 6,195 IS42S32400E-7BL 15,443 7,200
IS42S32400E-6BLI 9 6,609 IS42S32400E-7BL-TR 6,240
IS42S32400E-6BLI-TR 6,038 IS42S32400E-7BLI 6,760
IS42S32400E-6TL 22 6,936 IS42S32400E-7BLI-TR 6,075
IS42S32400E-6TL-TR 5,000 IS42S32400E-7TI 108
IS42S32400E-6TLI 6,803 IS42S32400E-7TI-TR 1,500
IS42S32400E-6TLI-TR 6,826 IS42S32400E-7TL 60 50
IS42S32400E-75ETL IS42S32400E-7TL-TR 6,276
IS42S32400E-75ETL-TR IS42S32400E-7TLI 5,000
IS42S32400E-75ETLI 104 IS42S32400E-7TLI-TR 6,739