IS45S16320B-7CTLA2

容量 512M
規格 32Mx16
電壓 3.3V
類型 SDR
刷新 8K
速度 7 = 143MHz
狀態 Contact ISSI
評注
腳位數 TSOP2(54), BGA(54)
温度等级 A2 = Automotive Grade (-40°C to +105°C)
焊料類型 L = 100% matte Sn
Generation B = B
字數 320 = 32M
CL(CAS延遲) C = 4
工作電壓範圍 S = 3.3V SDR
總線寬度 16 = x16
腳位/封裝 T = TSOP
產品系列 45 = SDR Automotive grade

IS45S16320B-7CTLA2 特徵

  • Clock frequency: 166, 143, 133 MHz
  • -6 6 10 166 100 5.4 6 -7 7 10 143 100 5.4 6 -75E Unit
    • 7.5
    • 133
    • 5.5 ns ns Mhz Mhz ns ns
  • Internal bank for hiding row access/precharge
  • Power supply IS42/45S16320B IS42S86400B
  • LVTTL interface
  • Programmable burst length Vdd Vddq 3.3V 3.3V 3.3V 3.3V
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Auto Refresh (CBR)
  • Self Refresh
  • 8K refresh cycles every 16ms (A2 grade) or 64 ms (Commercial, Industrial, A1 grade)
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command
  • Available in 54-pin TSOP-II and 54-ball W-BGA (x16 only)

概觀

ISSI's 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS45S16320B-7CTLA2-TR IS45S16320B-7CTNA1 108
IS45S16320B-6BLA1 IS45S16320B-7CTNA1-TR 500
IS45S16320B-6BLA1-TR IS45S16320B-7CTNA2
IS45S16320B-7BLA1 1,008 IS45S16320B-7CTNA2-TR
IS45S16320B-7BLA1-TR 6,833 IS45S16320B-7TLA1 6,019
IS45S16320B-7BLA2 IS45S16320B-7TLA1-TR 6,660
IS45S16320B-7BLA2-TR IS45S16320B-7TLA2 2,000
IS45S16320B-7CTLA1 IS45S16320B-7TLA2-TR
IS45S16320B-7CTLA1-TR