1. 矽成
  2. 動態記憶體
  3. 同步動態隨機存取記憶體
  4. 3.3V Automotive
  5. 512M 32Mx16
  6. TSOP2(54), BGA(54)
  7. IS45S16320F-7BLA1

  IS45S16320F-7BLA1

數據表
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容量 512M
規格 32Mx16
電壓 3.3V
類型 SDR
刷新 8K
速度 7 = 143MHz
狀態 Prod
評注
腳位數 TSOP2(54), BGA(54)
温度等级 A1 = Automotive Grade (-40°C to +85°C)
焊料類型 L = SnAgCu
字數 320 = 32M
工作電壓範圍 S = 3.3V SDR
Generation F = F
總線寬度 16 = x16
腳位/封裝 B = BGA
產品系列 45 = SDR Automotive grade
數據表
索取報價

IS45S16320F-7BLA1 特徵

  • Clock frequency: 200, 166, 143 MHz
  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access/precharge
  • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxF - Vdd/Vddq = 3.3V IS42/45RxxxxxF - Vdd/Vddq = 2.5
  • LVTTL interface
  • Programmable burst length
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Auto Refresh (CBR)
  • Self Refresh
  • 8K refresh cycles every 64 ms
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command
  • Packages: x8/x16: 54-pin TSOP-II, 54-ball TF-BGA (x16 only)

概觀

ISSI's 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS45S16320F-7BLA1-TR 7,500 IS45S16320F-7CTLA1-TR 6,581
IS45S16320F-6BLA1 1 6,193 IS45S16320F-7CTLA2 6,193
IS45S16320F-6BLA1-TR 7,500 IS45S16320F-7CTLA2-TR 6,960
IS45S16320F-6TLA1 5,000 IS45S16320F-7TLA1 52 33
IS45S16320F-6TLA1-TR 6,500 IS45S16320F-7TLA1-TR 6,500
IS45S16320F-7BLA2 19 IS45S16320F-7TLA2 2 71
IS45S16320F-7BLA2-TR 7,500 IS45S16320F-7TLA2-TR 6,500
IS45S16320F-7CTLA1 165 8