1. 矽成
  2. 靜態隨機存取存儲器
  3. Serial SRAM & Low Pin Count SRAM
  4. Automotive Asynchronous SRAM
  5. 1.65~3.6
  6. 16M 1Mx16
  7. TSOP1(48), BGA(48)
  8. IS64WV102416EDBLL-12B4LA3

  IS64WV102416EDBLL-12B4LA3

數據表
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容量 16M
規格 1Mx16
電壓 1.65~3.6
狀態 Prod
腳位數 TSOP1(48), BGA(48)
速度Ns 12
評論上一篇 ECC based SRAM
數據表
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IS64WV102416EDBLL-12B4LA3 特徵

  • High-speed access time: 10ns, 12ns
  • Single power supply
    • 1.65V-2.2V VDD(IS61/64WV102416EDALL)
    • 2.4V-3.6V VDD (IS61/64WV102416EDBLL)
  • Error Detection and Correction with optional ERR1/ERR2 output pin:
  • - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indicates 2-bit error detection
  • Three state outputs Industrial and Automotive temperature support

概觀

The ISSI IS61/64WV102416EDALL/EDBLL are high-speed, low power, 16M bit static RAMs organized as 1M words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology and implemented ECC function to improve reliability.

 

相關IC编號

IC 編號 庫存數量 可用數量
IS64WV102416EDBLL-12B4LA3-TR