容量 1M
規格 128Kx8
電壓 5V
狀態 Prod
腳位數 SOJ(32.3), SOJ(32.4), TSOP1(32), sTSOP(32)
速度Ns 12

IS61C1024AL-12JLI 特徵

  • High-speed access time: 12, 15 ns
  • Low active power: 160 mW (typical)
  • Low standby power: 1000 µW (typical) CMOS standby
  • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications
  • Fully static operation: no clock or refresh required
  • TTL compatible inputs and outputs
  • Single 5V (±10%) power supply
  • Commercial, industrial, and automotive tempera- ture ranges available


The ISSI IS61C1024AL/IS64C1024AL is a very high- speed, low power, 131,072-word by 8-bit CMOS static RAMs. They are fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE1 is HIGH or CE2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced by using CMOS input levels. Easy memory expansion is provided by using two Chip Enable inputs, CE1 and CE2. The active LOW Write Enable (WE) controls both writing and reading of the memory. The IS61C1024AL/IS64C1024AL is available in 32-pin 300-mil SOJ, 32-pin 400-mil SOJ, 32-pin TSOP (Type I, 8x20), and 32-pin sTSOP (Type I, 8 x 13.4) packages.



IS61C1024AL-12JLI-TR IS61C1024AL-12HLI-TR IS61C1024AL-12KLI-TR IS61C1024AL-12TLI-TR
IS61C1024AL-12HLI IS61C1024AL-12KLI IS61C1024AL-12TLI