IS61WV10248EDBLL-8BLI-TR

容量 8M
規格 1Mx8
電壓 2.4-3.6V
狀態 Prod
腳位數 TSOP2(44), BGA(48)
速度Ns 8, 10, 20
評論上一篇 ECC Based SRAM

IS61WV10248EDBLL-8BLI-TR 特徵

  • High-speed access times: 8, 10, 20 ns
  • High-performance, low-power CMOS process
  • Multiple center power and ground pins for greater noise immunity
  • Easy memory expansion with CE and OE options
  • CE power-down
  • Fully static operation: no clock or refresh required
  • TTL compatible inputs and outputs
  • Packages available:
    • 48-ball miniBGA (6mm x 8mm)
    • 44-pin TSOP (Type II)
  • Industrial and Automotive Temperature Support

概觀

The ISSI IS61/64WV10248EDBLL are very high-speed, low power, 1M-word by 8-bit CMOS static RAM. The IS61/64WV10248EDBLL are fabricated using ISSI's high-performance CMOS technology. This highly reli- able process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.

 

相關IC编號

IS61WV10248EDBLL-8BLI IS61WV10248EDBLL-10BLI IS61WV10248EDBLL-10TI-TR IS61WV10248EDBLL-8TLI
IS61WV10248EDBLL-10BI IS61WV10248EDBLL-10BLI-TR IS61WV10248EDBLL-10TLI IS61WV10248EDBLL-8TLI-TR
IS61WV10248EDBLL-10BI-TR IS61WV10248EDBLL-10TI IS61WV10248EDBLL-10TLI-TR