IS61WV12816EDBLL-10TI

容量 2M
規格 128Kx16
電壓 2.4-3.6V
狀態 Prod
腳位數 TSOP2(44), BGA(48)
速度Ns 8, 10
評論上一篇 ECC Based SRAM

IS61WV12816EDBLL-10TI 特徵

  • High-speed access time: 8, 10 ns
  • Low Active Power: 85 mW (typical)
  • Low Standby Power: 7 mW (typical) OCTOBER 2011 CMOS standby
  • Single power supply — Vdd 2.4V to 3.6V (10 ns) — Vdd 3.3V ± 10% (8 ns)
  • Fully static operation: no clock or refresh required
  • Three state outputs
  • Data control for upper and lower bytes
  • Industrial and Automotive temperature support
  • Lead-free available

概觀

The ISSI IS61/64WV12816EDBLL is a high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high- performance and low power consumption devices.

 

相關IC编號

IS61WV12816EDBLL-10TI-TR IS61WV12816EDBLL-10BLI-TR IS61WV12816EDBLL-8BI-TR IS61WV12816EDBLL-8TI-TR
IS61WV12816EDBLL-10BI IS61WV12816EDBLL-10TLI IS61WV12816EDBLL-8BLI IS61WV12816EDBLL-8TLI
IS61WV12816EDBLL-10BI-TR IS61WV12816EDBLL-10TLI-TR IS61WV12816EDBLL-8BLI-TR IS61WV12816EDBLL-8TLI-TR
IS61WV12816EDBLL-10BLI IS61WV12816EDBLL-8BI IS61WV12816EDBLL-8TI