IS61WV25616EDALL-20TLI

容量 4M
規格 256Kx16
電壓 1.65-2.2V
狀態 Prod
腳位數 TSOP2(44), BGA(48)
速度Ns 20
評論上一篇 ECC Based SRAM

IS61WV25616EDALL-20TLI 特徵

  • High-speed access time: 20ns
  • Single power supply
    • 1.65V-2.2V VDD
  • Low Standby Current:1.5mA (typical)
  • Fully static operation: no clock or refresh required
  • Data control
  • Three state outputs
  • Lead-free available

概觀

The ISSI IS61WV25616EDALL are high-speed, low power, 4M bit static RAMs organized as 256K words by 16 bits. It is ISSI's high-performance CMOS technology and implemented ECC function to improve reliability.

 

相關IC编號

IS61WV25616EDALL-20TLI-TR IS61WV25616EDALL-20BI-TR IS61WV25616EDALL-20BLI-TR
IS61WV25616EDALL-20BI IS61WV25616EDALL-20BLI