IS61WV2568EFBLL-10BI-TR

容量 2M
規格 256Kx8
電壓 1.65-3.6V
狀態 Prod
腳位數 SOJ(36), TSOP2(44), BGA(36)
速度Ns 8, 10, 12
評論上一篇 ECC Based SRAM

IS61WV2568EFBLL-10BI-TR 特徵

  • High-speed access time: 8ns, 10ns, 12ns
  • Single power supply
    • 1.65V-2.2V VDD(IS61/64WV2568EFALL)
    • 2.4V-3.6V VDD (IS61/64WV2568EFBLL)
  • Error Detection and Correction with optional ERR1/ERR2 output pin:
  • - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indicates 2-bit error detection
  • Three state outputs Industrial and Automotive temperature support

概觀

The ISSI IS61/64WV2568EFALL/EFBLL are high-speed, low power, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology and implemented ECC function to improve reliability.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS61WV2568EFBLL-10BI IS61WV2568EFALL-10TLI-TR
IS61WV2568EFALL-10B2I IS61WV2568EFBLL-10B2I
IS61WV2568EFALL-10B2I-TR IS61WV2568EFBLL-10B2I-TR
IS61WV2568EFALL-10B2LI IS61WV2568EFBLL-10B2LI
IS61WV2568EFALL-10B2LI-TR IS61WV2568EFBLL-10B2LI-TR
IS61WV2568EFALL-10BI IS61WV2568EFBLL-10BLI
IS61WV2568EFALL-10BI-TR IS61WV2568EFBLL-10BLI-TR
IS61WV2568EFALL-10BLI IS61WV2568EFBLL-10K2LI
IS61WV2568EFALL-10BLI-TR IS61WV2568EFBLL-10K2LI-TR
IS61WV2568EFALL-10K2LI IS61WV2568EFBLL-10KLI
IS61WV2568EFALL-10K2LI-TR IS61WV2568EFBLL-10KLI-TR
IS61WV2568EFALL-10KLI IS61WV2568EFBLL-10T2LI
IS61WV2568EFALL-10KLI-TR IS61WV2568EFBLL-10T2LI-TR
IS61WV2568EFALL-10T2LI IS61WV2568EFBLL-10TLI
IS61WV2568EFALL-10T2LI-TR IS61WV2568EFBLL-10TLI-TR
IS61WV2568EFALL-10TLI