IS61WV51216EEBLL-10B2I

容量 8M
規格 512Kx16
電壓 1.65-3.6V
狀態 S=NOW
腳位數 TSOP1(48), TSOP2(44), TSOP2(54), BGA(48)
速度Ns 8, 10, 20
評論上一篇 ECC Based SRAM

IS61WV51216EEBLL-10B2I 特徵

  • High-speed access time: 8ns, 10ns, 20ns
  • Single power supply
    • 1.65V-2.2V VDD (IS61WV51216EEALL)
    • 2.4V-3.6V VDD (IS61/64WV51216EEBLL)
  • Error Detection and Correction with optional ERR1/ERR2 output pin:
  • - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indicates 2-bit error detection
  • Package Available:
  • - - - - 44-pin TSOP (Type II) 48-pin TSOP (Type I) 48-ball mini BGA (6mm x 8mm) 54 pin TSOP (Type II)
  • Three state outputs

概觀

The ISSI IS61/64WV51216EEALL/BLL are high-speed, low power, 16M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology and implemented ECC function to improve reliability.

 

相關IC编號

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IS61WV51216EEALL-20B2LI IS61WV51216EEBLL-10BI IS61WV51216EEBLL-10TLI IS61WV51216EEBLL-8T2LI
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IS61WV51216EEALL-20BLI-TR IS61WV51216EEBLL-10BLI-TR IS61WV51216EEBLL-8B2I-TR IS61WV51216EEBLL-8T3LI-TR
IS61WV51216EEALL-20T2LI IS61WV51216EEBLL-10T2LI IS61WV51216EEBLL-8B2LI IS61WV51216EEBLL-8T4LI
IS61WV51216EEALL-20T2LI-TR IS61WV51216EEBLL-10T2LI-TR IS61WV51216EEBLL-8B2LI-TR IS61WV51216EEBLL-8T4LI-TR
IS61WV51216EEALL-20TLI IS61WV51216EEBLL-10T3LI IS61WV51216EEBLL-8BI IS61WV51216EEBLL-8TLI
IS61WV51216EEALL-20TLI-TR IS61WV51216EEBLL-10T3LI-TR IS61WV51216EEBLL-8BI-TR IS61WV51216EEBLL-8TLI-TR
IS61WV51216EEBLL-10B2LI IS61WV51216EEBLL-10T4LI IS61WV51216EEBLL-8BLI