1. 矽成
  2. 靜態隨機存取存儲器
  3. 異步 SRAM
  4. High Speed Low Power
  5. 1.65-3.6V
  6. SOJ(36), TSOP2(44), BGA(36)
  7. IS61WV5128BLS

  IS61WV5128BLS

數據表
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規格 512Kx8
腳位/封裝 SOJ(36), TSOP2(44), BGA(36)
電壓 1.65-3.6V
型號別 IBIS
狀態 Prod
評注 IS61LV5128AL
速度（ns） 8, 10, 20
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IS61WV5128BLS 特徵

  • High-speed access time: 8, 10, 20 ns
  • Low Active Power: 85 mW (typical)
  • Low stand-by power: 7 mW (typical) CMOS standby LOW POWER: (IS61/64WV5128ALS/BLS)
  • High-speed access time: 25, 35 ns
  • Low Active Power: 35 mW (typical)
  • Low stand-by power: 0.6 mW (typical) CMOS standby
  • Single power supply — Vdd 1.65V to 2.2V (IS61WV5128Axx) — Vdd 2.4V to 3.6V (IS61/64WV5128Bxx)
  • Fully static operation: no clock or refresh required
  • Three state outputs
  • Industrial and Automotive temperature support

概觀

The ISSI IS61WV5128Axx and IS61/64WV5128Bxx are very high-speed, low power, 524,288-word by 8-bit CMOS static RAMs. The IS61WV5128Axx and IS61/64WV5128Bxx are fabricated using ISSI's high- performance CMOS technology. This highly reliable pro- cess coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.