| 容量 | 4M |
|---|---|
| 規格 | 512Kx8 |
| 電壓 | 1.65-3.6V |
| 狀態 | Prod |
| 腳位數 | SOJ(36), TSOP2(44), BGA(36) |
| 速度Ns | 8, 10, 12 |
| 評論上一篇 | ECC Based SRAM |
The ISSI IS61/64WV5128EFALL/EFBLL are high-speed, low power, 4M bit static RAMs organized as 512K words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology and implemented ECC function to improve reliability.