IS61WV6416DBLL-10TLI

容量 1M
規格 64Kx16
電壓 2.4-3.6V
狀態 Prod
腳位數 TSOP2(44), SOJ(44), BGA(48)
速度Ns 8, 10, 12
評論上一篇 IS61LV6416/L, IS61WV6416BLL
電壓範圍 BLL = 2.5V to 3.6V
温度等级 I = Industrial Grade (-40C to +85°C)
No Words 64K = 64K
焊料類型 L = Lead-free (ROHS Compliant)
速度 10NS = 10NS
Bit Org 16 = 16
Operating Voltage WV = Wide Voltage Range
產品系列 61 = High Speed
包裝代碼 T = TSOP

IS61WV6416DBLL-10TLI 特徵

  • High-speed access time: 8, 10, 12, 20 ns
  • Low Active Power: 135 mW (typical)
  • High-speed access time: 25, 35 ns
  • Low Active Power: 55 mW (typical)
  • Low Standby Power: 12 µW (typical) CMOS standby
  • Single power supply — Vdd 1.65V to 2.2V (IS61WV6416DAxx) — Vdd 2.4V to 3.6V (IS61/64WV6416DBxx)
  • Fully static operation: no clock or refresh required
  • Three state outputs
  • Data control for upper and lower bytes
  • Industrial and Automotive temperature support

概觀

The ISSI IS61WV6416DAxx/DBxx and IS64WV6416DBxx are high-speed, 1,048,576-bit static RAMs organized as 65,536 words by 16 bits. It is fabricated using ISSI's high- performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

 

相關IC编號

IS61WV6416DBLL-10TLI-TR IS61WV6416DBLL-10KI-TR IS61WV6416DBLL-8BI-TR IS61WV6416DBLL-8KLI-TR
IS61WV6416DBLL-10BI IS61WV6416DBLL-10KLI IS61WV6416DBLL-8BLI IS61WV6416DBLL-8TI
IS61WV6416DBLL-10BI-TR IS61WV6416DBLL-10KLI-TR IS61WV6416DBLL-8BLI-TR IS61WV6416DBLL-8TI-TR
IS61WV6416DBLL-10BLI IS61WV6416DBLL-10TI IS61WV6416DBLL-8KI IS61WV6416DBLL-8TLI
IS61WV6416DBLL-10BLI-TR IS61WV6416DBLL-10TI-TR IS61WV6416DBLL-8KI-TR IS61WV6416DBLL-8TLI-TR
IS61WV6416DBLL-10KI IS61WV6416DBLL-8BI IS61WV6416DBLL-8KLI