The ISSI IS62WV102416ALL/BLL and IS65WV102416BLL
are high-speed, 16M-bit static RAMs organized as 1024K
words by 16 bits. It is fabricated using ISSI's high-perfor-
mance CMOS technology. This highly reliable process
coupled with innovative circuit design techniques, yields
high-performance and low power consumption devices.
When CS1 is HIGH (deselected) or when CS2 is LOW
(deselected) or when CS1 is LOW, CS2 is HIGH and both
LB and UB are HIGH, the device assumes a standby mode
at which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE) controls both writing and reading of the memory. A
data byte allows Upper Byte (UB) and Lower Byte (LB)