|評注||Icc = 12mA (Max), Isb1 = 30uA (Typ). x8/x16 configurable|
|產品系列||62 = 低電量|
|電壓範圍||BLL = 2.2V (2.4V/2.5V) to 3.6V|
|焊接||[空白] = SnPb|
|温規||I = 工業級 (-40C to +85°C)|
- High-speed access time: 45ns, 55ns.
- CMOS low power operation
- 25 µA (typical) CMOS standby
- CMOS for optimum speed and power and TTL compatible interface levels
- Single power supply
- 1.65V~1.98V VDD (IS62/65WV102416DALL)
- 2.2V~3.6V VDD (IS62/65WV102416DBLL)
- Fully static operation: no clock or refresh required Industrial and Automotive temperature support
The ISSI IS62/65WV102416DALL, IS62/65WV102416DBLL are ULTRA LOW POWER CMOS 16Mbit static RAMs organized as 1M words by 16 bits. It is fabricated using ISSI's high- performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. The IS62WV102416DALL/ DBLL and IS65WV102416DALL/DBLL are packaged in 48-Pin TSOP (TYPE I).