IS62WV6416FALL-55TLI

容量 1M
規格 64Kx16
電壓 1.65-3.6V
狀態 Prod
腳位數 TSOP2(44), BGA(48)
速度Ns 45, 55
評論上一篇
電壓範圍 ALL = 1.65V to 2.2V
温度等级 I = Industrial Grade (-40C to +85°C)
No Words 64K = 64K
焊料類型 L = Lead-free (ROHS Compliant)
速度 55NS = 55NS
Bit Org 16 = 16
Operating Voltage WV = Wide Voltage Range
產品系列 62 = Low Power
包裝代碼 T = TSOP

IS62WV6416FALL-55TLI 特徵

  • High-speed access time: 45ns, 55ns
  • CMOS low power operation
    • Operating Current: 26 mA (max) at 125°C
    • CMOS Standby Current: 3 uA (typ) at 25°C
  • TTL compatible interface levels
  • Single power supply
    • 1.65V-2.2V VDD (IS62/65WV6416FALL)
    • 2.2V-3.6V VDD (IS62/65WV6416FBLL)
  • Three state outputs
  • Data Control for upper and lower bytes
  • Industrial and Automotive temperature support
  • 2CS Option Available

概觀

SRAM is one of random access memories. Each byte or word has an address and can be accessed randomly. SRAM has three different modes supported. Each function is described below with Truth Table. Below description is based on the device with 2 CS pins. STANDBY MODE Device enters standby mode when deselected (CS1# HIGH or CS2 LOW or both UB# and LB# are HIGH). The input and output pins (I/O0-15) are placed in a high impedance state. The current consumption in this mode will be ISB1 or ISB2. CMOS input in this mode will maximize saving power. WRITE MODE Write operation issues with Chip selected (CS1# LOW and CS2 HIGH) and Write Enable (WE#) input LOW. The input and output pins (I/O0-15) are in data input mode. Output buffers are closed during this time even if OE# is LOW. UB# and LB# enables a byte write feature. By enabling LB# LOW, data from I/O pins (I/O0 through I/O7) are written into the location specified on the address pins. And with UB# being LOW, data from I/O pins (I/O8 through I/O15) are written into the location. READ MODE Read operation issues with Chip selected (CS1# LOW and CS2 HIGH) and Write Enable (WE#) input HIGH. When OE# is LOW, output buffer turns on to make data output. Any input to I/O pins during READ mode is not permitted. UB# and LB# enables a byte read feature. By enabling LB# LOW, data from memory appears on I/O0-7. And with UB# being LOW, data from memory appears on I/O8-15. In the READ mode, output buffers can be turned off by pulling OE# HIGH. In this mode, internal device operates as READ but I/Os are in a high impedance state. Since device is in READ mode, active current is used. TRUTH TABLE.

 

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