IS63WV1288DALL-TR

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容量	1M
規格	128Kx8
電壓	1.65-3.6V
狀態	Prod
腳位數	TSOP2(32), BGA(48), sTSOP1(32), SOJ(32.3)
速度Ns	8, 10, 12, 20
評論上一篇	IS63LV1024/L, IS63WV1024BLL
Operating Voltage	WV = Wide Voltage Range
電壓範圍	ALL = 1.65V to 2.2V
Revision	D = D
字數	128 = 128K
產品系列	63 = High Speed
Bit Org	8 = x8
外包裝	Tape on Reel

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IS63WV1288DALL-TR 特徵

High-speed access time: 8, 10, 12, 20 ns
Low Active Power: 135 mW (typical)
Low Standby Power: 12 µW (typical) CMOS standby LOW POWER: (IS63/64WV1288DALS/DBLS)
High-speed access time: 25, 35 ns
Low Active Power: 55 mW (typical)
Low Standby Power: 12 µW (typical) CMOS standby
Single power supply — Vdd 1.65V to 2.2V (IS63WV1288DAxx) — Vdd 2.4V to 3.6V (IS63/64WV1288DBxx)
Multiple center power and ground pins for greater noise immunity
Easy memory expansion with CE and OE options
CE power-down
Fully static operation: no clock or refresh required
TTL compatible inputs and outputs

概觀

The ISSI IS63/64WV1288Dxxx is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM. The IS63/64WV1288DBLL is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.

IS63WV1288DALL-TR

IS63WV1288DALL-TR 特徵

概觀

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