規格 128Kx8
電壓 1.65-3.6V
速度(ns) 8
腳位/封裝 H = sTSOP
狀態 Prod
型號別 IBIS
評注 IS63LV1024/L, IS63WV1024BLL
產品系列 63 = 高速
硅片版本 D
電壓範圍 BLL = 2.2V (2.4V/2.5V) to 3.6V
焊接 L = 無鉛
温規 I = 工業級 (-40C to +85°C)
外包裝 卷轴包


  • High-speed access time: 8, 10, 12, 20 ns
  • Low Active Power: 135 mW (typical)
  • Low Standby Power: 12 µW (typical) CMOS standby LOW POWER: (IS63/64WV1288DALS/DBLS)
  • High-speed access time: 25, 35 ns
  • Low Active Power: 55 mW (typical)
  • Low Standby Power: 12 µW (typical) CMOS standby
  • Single power supply — Vdd 1.65V to 2.2V (IS63WV1288DAxx) — Vdd 2.4V to 3.6V (IS63/64WV1288DBxx)
  • Multiple center power and ground pins for greater noise immunity
  • Easy memory expansion with CE and OE options
  • CE power-down
  • Fully static operation: no clock or refresh required
  • TTL compatible inputs and outputs


The ISSI IS63/64WV1288Dxxx is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM. The IS63/64WV1288DBLL is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.