規格 1Mx8
電壓 1.65-3.6V
速度(ns) 55
腳位/封裝 CT = Copper TSOP
狀態 S=NOW
評注 ECC based SRAM
產品系列 65 = 車用低功耗
硅片版本 EF
電壓範圍 BLL = 2.2V (2.4V/2.5V) to 3.6V
焊接 L = 無鉛
温規 A3 = 車規 (-40C to +125°C)
外包裝 卷轴包

IS65WV10248EFBLL-55CTLA3-TR 特徵

  • High-speed access time: 45ns, 55ns
  • CMOS low power operation
    • Operating Current: 36mA (max.)
    • CMOS standby Current: 5.8uA (typ.)
  • TTL compatible interface levels
  • Single power supply
    • 1.65V-2.2V VDD (IS62/65WV10248EFALL)
    • 2.2V-3.6V VDD (IS62/65WV10248EFBLL)
  • Optional ERR1/ERR2 pin: ERR1: indicates 1-bit error detection and correction. ERR2: indicates 2-bit error detection
  • Three state outputs Industrial and Automotive temperature support


The ISSI IS62/65WV10248EFALL/BLL are high-speed, 8M bit static RAMs organized as 1M words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology and implemented ECC function to improve reliability. This highly reliable process coupled with innovative circuit design techniques including ECC, yields high-performance and low power consumption devices.