規格 128Kx16
電壓 2.2-3.6V
速度(ns) 55
腳位/封裝 CT = Copper TSOP
狀態 Prod
產品系列 65 = 車用低功耗
硅片版本 E
電壓範圍 BLL = 2.2V (2.4V/2.5V) to 3.6V
焊接 L = 無鉛
温規 A3 = 車規 (-40C to +125°C)

IS65WV12816EBLL-55CTLA3 特徵

  • High-speed access time: 45ns, 55ns
  • CMOS low power operation
    • Operating Current: 18 mA (max) at 85°C
    • CMOS Standby Current: 5.4uA (typ) at 25°C
  • TTL compatible interface levels
  • Single power supply
    • 1.65V-2.2V VDD (IS62WV12816EALL)
    • 2.2V-3.6V VDD (IS62/65WV12816EBLL)
  • Three state outputs


The ISSI IS62/65WV12816EALL/EBLL are high-speed, 2M bit static RAMs organized as 128K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CS1# is HIGH (deselected) or when CS2 is LOW (deselected) or when CS1# is LOW, CS2 is HIGH and both LB# and UB# are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE#) controls both writing and reading of the memory. A data byte allows Upper Byte (UB#) and Lower Byte (LB#) access.