規格 256Kx16
電壓 1.65-3.3V
速度(ns) 55
腳位/封裝 B = BGA
狀態 Prod
型號別 IBIS
產品系列 65 = 車用低功耗
電壓範圍 BLL = 2.2V (2.4V/2.5V) to 3.6V
焊接 [空白] = SnPb
温規 A1 = 車規 (-40C to +85°C)
外包裝 卷轴包

IS65WV25616BLL-55BA1-TR 特徵

  • High-speed access time: 55ns, 70ns
  • CMOS low power operation 36 mW (typical) operating 9 µW (typical) CMOS standby
  • TTL compatible interface levels
  • Single power supply 1.65V--2.2V Vdd (65WV25616ALL) 2.5V--3.6V Vdd (65WV25616BLL)
  • Fully static operation: no clock or refresh required
  • Three state outputs
  • Data control for upper and lower bytes
  • TEMPERATURE OFFERINGS: Option A1: -40°C to +85°C Option A2: -40°C to +105°C Option A3: -40°C to +125°C


The ISSI IS65WV25616ALL/IS65WV25616BLL are high- speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CS1 is HIGH (deselected) or when CS1 is LOW, and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS65WV25616BALL/65WV25616BLL are packaged in the JEDEC standard 44-Pin TSOP (TYPE II) and 48-pin mini BGA (6mmx8mm).