| 容量 | 8M |
|---|---|
| 規格 | 512Kx16 |
| 電壓 | 1.65-3.6V |
| 狀態 | Prod |
| 腳位數 | TSOP2(44), BGA(48) |
| 速度Ns | 45, 55 |
| 評論上一篇 | ECC based SRAM |
The ISSI IS62/65WV51216EFALL/BLL are high-speed, low power, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology and implemented ECC function to improve reliability.