規格 | 1Mx16 |
---|---|
腳位/封裝 | VFBGA(54) |
電壓 | 1.7-1.95V |
焊接 | Lead-free (RoHS Compliant) |
狀態 | Prod |
評注 | CRAM 1.5 |
外包裝 | Tape on Reel |
速度(ns) | 70 |
温規 | Industrial Grade (-40C to +85°C) |
電壓範圍 | 1.65V to 2.2V |
產品系列 | Pseudo SRAM |
Item | 66 = Pseudo SRAM/HyperRAM™ |
ROHS版 | L = true |
產品類別 | WVC = Cellular RAM 1.5 |
溫度範圍 | I = Industrial (-40°C to 85°C) |
速度 | 7013 = 133 MHz |
電壓 - 電源 | ALL = 1.8V |
密度配置 | 1M16 = 16Mb /1M x16 |
包裝代碼 | B = 54-ball VFBGA |
The IS66WVC1M16ALL and IS67WVC1M16ALL is an integrated memory device containing 16Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 1M words by 16 bits. The device includes several power saving modes : Reduced Array Refresh mode where data is retained in a portion of the array and Temperature Controlled Refresh. Both these modes reduce standby current drain. The device can be operated in a standard asynchronous mode and high performance burst mode. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.