生產年份 數量
容量 256M
規格 16Mx16
電壓 2.5V
類型 DDR
刷新 8K
速度 5 = 200MHz
狀態 NR
腳位數 TSOP2(66), BGA(60)
Generation D = D
產品系列 43 = DDR/DDR2/DDR3/DDR4 Commercial/Industrial grade
温度等级 I = Industrial Grade (-40C to +85°C)
腳位/封裝 B = BGA
焊料類型 L = SnAgCu
字數 160 = 16M
工作電壓範圍 R = 2.5V DDR or 2.5V SDR
總線寬度 16 = x16
生產年份 數量

IS43R16160D-5BLI 特徵

  • VDD and VDDQ: 2.5V ± 0.2V
  • SSTL_2 compatible I/O
  • Double-data rate architecture; two data transfers per clock cycle
  • Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver
  • DQS is edge-aligned with data for READs and centre-aligned with data for WRITEs
  • Differential clock inputs (CK and CK)
  • DLL aligns DQ and DQS transitions with CK transitions
  • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS
  • Four internal banks for concurrent operation
  • Data Mask for write data. DM masks write data at both rising and falling edges of data strobe
  • Burst Length: 2, 4 and 8
  • Burst Type: Sequential and Interleave mode
  • Programmable CAS latency: 2, 2.5 and 3
  • Auto Refresh and Self Refresh Modes
  • Auto Precharge
  • TRAS Lockout supported (tRAP = tRCD) OPTIONS
  • Configuration(s): 8Mx32, 16Mx16, 32Mx8
  • Package(s): 144 Ball BGA (x32) 66-pin TSOP-II (x8, x16) and 60 Ball BGA (x8, x16)
  • Lead-free package available


ISSI’s 256-Mbit DDR SDRAM achieves high speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 268,435,456-bit memory array is internally organized as four banks of 64Mb to allow concurrent operations. The pipeline allows Read and Write burst accesses to be virtually continuous, with the option to concatenate or truncate the bursts. The programmable features of burst length, burst sequence and CAS latency enable further advantages. The device is available in 8-bit, 16-bit and 32-bit data word size Input data is registered on the I/O pins on both edges of Data Strobe signal(s), while output data is referenced to both edges of Data Strobe and both edges of CLK. Commands are registered on the positive edges of CLK. An Auto Refresh mode is provided, along with a Self Refresh mode. All I/Os are SSTL_2 compatible.



IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS43R16160D-5BLI-TR 7,500 IS43R16160D-6BI-TR 2,500
IS43R16160D-5BI IS43R16160D-6BL 6,594
IS43R16160D-5BI-TR IS43R16160D-6BL-TR 7,500
IS43R16160D-5BL 6,330 IS43R16160D-6BLI 1,900
IS43R16160D-5BL-TR 7,500 IS43R16160D-6BLI-TR 7,500
IS43R16160D-5TL 6,946 IS43R16160D-6TL 6,174
IS43R16160D-5TL-TR 6,792 IS43R16160D-6TL-TR 6,500
IS43R16160D-5TLI 6,874 IS43R16160D-6TLI 6,091
IS43R16160D-5TLI-TR 6,500 IS43R16160D-6TLI-TR 5,000
IS43R16160D-6BI 190