IS43DR82560B-3DBLI

容量	2G
規格	256Mx8
電壓	1.8V
類型	DDR2
刷新	8K
速度	3 = 333MHz
狀態	NR
評注
腳位數	BGA(60)
温度等级	I = Industrial Grade (-40°C to +85°C)
焊料類型	L = SnAgCu
字數	2560 = 256M
CL（CAS延遲）	D = 5
工作電壓範圍	DR = 1.8V DDR2
Generation	B = B
總線寬度	8 = x8
腳位/封裝	B = BGA
產品系列	43 = DDR/DDR2/DDR3/DDR4 Commercial/Industrial grade

數據表

索取報價

IS43DR82560B-3DBLI 特徵

Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V
JEDEC standard 1.8V I/O (SSTL_18-compatible)
Double data rate interface: two data transfers per clock cycle
Differential data strobe (DQS, DQS)
4-bit prefetch architecture
On chip DLL to align DQ and DQS transitions with CK
8 internal banks for concurrent operation
Programmable CAS latency (CL) 3, 4, 5, 6, and 7 supported
Posted CAS and programmable additive latency (AL) 0, 1, 2, 3, 4, 5, and 6 supported
WRITE latency = READ latency - 1 tCK
Programmable burst lengths: 4 or 8
Adjustable data-output drive strength, full and reduced strength options
On-die termination (ODT) OPTIONS
Configuration(s): 256Mx8 (32Mx8x8 banks) IS43/46DR82560B 128Mx16 (16Mx16x8 banks) IS43/46DR16128B
Package: x8: 60-ball BGA (10.5mm x 13mm) x16: 84-ball WBGA (10.5mm x 13.5mm) Timing
- Cycle time 2.5ns @CL=6 DDR2-800E 3.0ns @CL=5 DDR2-667D

概觀

ISSI's 2Gb DDR2 SDRAM uses a double-data-rate architecture to achieve high-speed operation. The double-data rate architecture is essentially a 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls.

IC 編號	庫存數量	可用數量	IC 編號	庫存數量	可用數量
IS43DR82560B-3DBLI-TR			IS43DR82560B-25EBLI	2,262	1,500
IS43DR82560B-25EBL	93,026	37,432	IS43DR82560B-25EBLI-TR
IS43DR82560B-25EBL-TR

IS43DR82560B-3DBLI

IS43DR82560B-3DBLI 特徵

概觀

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