容量 1G
規格 128Mx8
類型 DDR3
電壓 1.5V
刷新 8K
速度 15 = up to 667 Mhz (DDR3 - 1333)
腳位/封裝 BGA(78)
狀態 Prod
型號別 IBIS
評注 ECC
產品系列 46 = 車規DDR/DDR2/DDR3/DDR4
總線寬度 8 = x8
字數 1280 = 128M
代/版本 E
CL(CAS延遲) H = 9
焊接 L = SnAgCu
温規 A1 = 車規 (-40C to +85°C)

IS46TR81280ED-15HBLA1 特徵

  • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
  • High speed data transfer rates with system frequency up to 800 MHz
  • 8 internal banks for concurrent operation
  • 8n-bit pre-fetch architecture
  • Programmable CAS Latency
  • Programmable Additive Latency: 0, CL-1,CL-2
  • Programmable CAS WRITE latency (CWL) based on tCK
  • Programmable Burst Length: 4 and 8
  • Programmable Burst Sequence: Sequential or Interleave
  • BL switch on the fly
  • Auto Self Refresh(ASR)
  • Self Refresh Temperature(SRT) ECC
  • Single bit error correction (per 64-bits)
  • Restrictions on Burst Length and Data Mask OPTIONS
  • Configuration: 128Mx8 64Mx16
  • Package: 96-ball FBGA (9mm x 13mm) for x16 78-ball FBGA (8mm x 10.5mm) for x8 SPEED BIN Speed Option 15H 125K MAY 2017
  • Refresh Interval: 7.8 μs (8192 cycles/64 ms) Tc= -40°C to 85°C 3.9 μs (8192 cycles/32 ms) Tc= 85°C to 105°C 1.95 μs (8192 cycles/16ms)Tc=105°C to 125°C
  • Partial Array Self Refresh
  • Asynchronous RESET pin
  • TDQS (Termination Data Strobe) supported (x8 only)
  • OCD (Off-Chip Driver Impedance Adjustment)
  • Dynamic ODT (On-Die Termination)
  • Driver strength : RZQ/7, RZQ/6 (RZQ = 240  )
  • Write Leveling