IS43TR16512S2DL

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容量	8G
規格	512Mx16
電壓	1.35V
類型	DDR3
刷新	8K
速度	1866, 1600
狀態	Prod
腳位數	BGA(96)
評論上一篇	Dual Rank, IS43TR16512AL
字數	512 = 512M
工作電壓範圍	TR = 1.5V DDR3
總線寬度	16 = x16
產品系列	43 = DDR/DDR2/DDR3/DDR4 Commercial/Industrial grade

IS43TR16512S2DL 特徵

1200 MHz DDR operation (2400 Mb/s/ball data rate)
Organization
- 64 Meg x 18, and 32 Meg x 36 common I/O (CIO) 16 banks
1.2V center-terminated push/pull I/O
2.5V VEXT, 1.35V VDD, 1.2V VDDQ (optional 1.35V VDDQ for 2400 operation only). Reduced cycle time (tRC (MIN) = 6.67 - 8ns)
SDR addressing
Programmable READ/WRITE latency (RL/WL) and burst length
Data mask for WRITE commands
Fr DK x#) and output data clocks (QK x, QK x#)
On-die DLL generates CK edge-aligned data and x, 1Gb: x18, x36 RLDRAM 3 Features Options
Clock cycle and tRC timing
- 0.83ns and tRC (MIN) = 6.67ns (RL3-2400) for -083F
- 0.83ns and tRC (MIN) = 7.5ns (RL3-2400) for -083E
- 0.93ns and tRC (MIN) = 7.5ns (RL3-2133) for -093F
- 0.93ns and tRC (MIN) = 8ns (RL3-2133) for -093E
- 1.07ns and tRC (MIN) = 8ns (RL3-1866) for -107E
64ms refresh (128K refresh per 64ms)
168-ball FBGA package
40 Ω or 60 Ω matched impedance outputs
Integrated on-die termination (ODT)
Single or multibank writes
Extended operating range (200
- 1200 MHz)
READ training register
Multiplexed and non-multiplexed addressing capa- bilities
Mirror function
Output driver and ODT calibration
Post Package Repar - 1 row per half bank